Carrier Dynamics via Microwave Photoconductivity

We use a microwave photoconductivity instrument to quantify the recombination lifetime of photo generated carriers in silicon to assess the quality of surface passivation.

We built this instrument in-house with our own control software. We use a 38 GHz (Ka band) microwave source and finline diode detector. A ~10 ns pulse from a 905 nm diode provides photoexditation, however the instrument is set up to use external triggering and a separate illumination source.

Contact Grimm for questions about use our about quantifying lifetimes in semiconductors.